Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

array(2) { ["lab"]=> string(3) "496" ["publication"]=> string(4) "2760" } Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes - 电子结构计算 | LabXing

电子结构计算

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2011

期刊 Journal of Physics D: Applied Physics

作者 Feng Chen · Chanan Euaruksakul · Zheng Liu · F J Himpsel · Feng Liu · Max G. Lagally

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卷 44
期 32
页码 325107
IOP Publishing
ISSN: 0022-3727
DOI: 10.1088/0022-3727/44/32/325107

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