#Gang Lin

Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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