Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6224" } Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

2018

期刊 Journal of Wuhan University of Technology-Mater. Sci. Ed.

作者 Pengfei Wang · Hui Zhu · Yingqiao Zhang · Shiwei Feng · Chunsheng Guo · Yamin Zhang · Xiao Meng · Qiong Qi

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卷 33
期 6
页码 1360-1364
Springer Nature
ISSN: 1000-2413
DOI: 10.1007/s11595-018-1975-9

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