实验室简介
Our research projects involve reliability issues of optical devices, primarily III-V nitride and SiC semiconductors, ferroelectric materials, especially the temperature measurments and thermal management. We also provide home-made thermal resistance tester, enabling to measure the thermal resistant of each vertical material.
Trapping Effects in GaN HEMTs
Trapping effect in GaN HEMTs has been studied using the current transients. A new method that can extract time constant spectrum has been presented, enbling a high resolution in distinguishing peaks. A differential amplitude spectrum for analyzing the degrees of traps contributing to the decay in channel currents has been proposed. A voltage transient method has been introduced to exclude the variation of bias on the drain-souce side.
