array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6226" } Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

分享到

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

2018
会议 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)
下载全文