array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6234" } Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal - Novel Semiconductor Devices and Reliability Lab | LabXing

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Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

2018
期刊 IEEE Transactions on Power Electronics
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  • 卷 33
  • 期 6
  • 页码 5274-5282
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0885-8993
  • DOI: 10.1109/tpel.2017.2736523
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