Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6247" } Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

2015

期刊 Semiconductor Science and Technology

作者 Yamin Zhang · Shiwei Feng · Li Wang · Yuan Ji · Xiaodong Han · Lei Shi · Yan Zhao

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卷 30
期 5
页码 055016
IOP Publishing
ISSN: 0268-1242
DOI: 10.1088/0268-1242/30/5/055016

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