array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6251" } Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars

2014
期刊 IEEE Transactions on Electron Devices
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  • 卷 61
  • 期 8
  • 页码 2854-2858
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2014.2331333