array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6288" } Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

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Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes

2008
期刊 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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  • 卷 26
  • 期 6
  • 页码 1987-1992
  • American Vacuum Society
  • ISSN: 1071-1023
  • DOI: 10.1116/1.3002393
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