Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12329" } Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors

2021

期刊 IEEE Transactions on Device and Materials Reliability

作者 Shijie Pan · Shiwei Feng · Xiang Zheng · Xin He · Xuan Li · Kun Bai

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页码 1-1
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1530-4388
DOI: 10.1109/tdmr.2021.3109088

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