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#Xiang Zheng
A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A voltage-transient method for characterizing traps in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A current transient method for trap analysis in BiFeO3 thin films
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
The study of temperature-dependent degradation of optical output on 808 nm GaAs-Based High-Power Laser Diode Bars
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Rapid test method for thermal characteristics of semiconductor devices
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection
Novel Semiconductor Devices and Reliability Lab , 北京工业大学