Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6231" } Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

关注

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

2018

期刊 Solid-State Electronics

作者 Hui Zhu · Xiao Meng · Xiang Zheng · Ying Yang · Shiwei Feng · Yamin Zhang · Chunsheng Guo

下载全文

卷 145
页码 40-45
Elsevier BV
ISSN: 0038-1101
DOI: 10.1016/j.sse.2018.04.006

LabXing 上可以免费创建课题组网站