Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12324" } Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

2021

期刊 Semiconductor Science and Technology

作者 Shijie Pan · Shiwei Feng · Xuan Li · Xiang Zheng · Xiaozhuang Lu · Chaoxu Hu · Xin He · Kun Bai · Lixing Zhou · Yamin Zhang

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卷 36
期 9
页码 095011
IOP Publishing
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ac1563

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