array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6260" } Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient

2019
期刊 IEEE Transactions on Device and Materials Reliability
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