Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient
2019
期刊
IEEE Transactions on Device and Materials Reliability
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- 页码 1-1
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 1530-4388
- DOI: 10.1109/tdmr.2019.2923107