array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "14824" } Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method - Novel Semiconductor Devices and Reliability Lab | LabXing

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Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

2022
期刊 IEEE Transactions on Electron Devices
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  • 卷 69
  • 期 9
  • 页码 4877-4882
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2022.3193889
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