Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6250" } Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

关注

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

2014

期刊 Journal of Semiconductors

作者 Yamin Zhang · Shiwei Feng · Hui Zhu · Xueqin Gong · Bing Deng · Lin Ma

下载全文

卷 35
期 10
页码 104003
IOP Publishing
ISSN: 1674-4926
DOI: 10.1088/1674-4926/35/10/104003

LabXing 上可以免费创建课题组网站