array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6256" } The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
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The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

2013
期刊 Chinese Physics B
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