array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6281" } Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

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大学 北京工业大学 / 信息学部
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Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor

2011
期刊 Advanced Materials Research
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The method of evaluation of VDMOS storage failure rate is presented and explained in this paper. To obtain a large number of devices working hours in a short time, the accelerated factor k is brought into the failure rate test, from which the test time can be reduced to 1/k. In this paper, the failure rate test of VDMOS is carried out at 270 °C about 1500 hours with the accelerator factor k=21.73079. The storage lifetime of VDMOS was calculated over 10 years. The key parameters have been measured and reliability of VDMOS in ten years storage time has been evaluated.

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